W-gated trench power MOSFET (WFET)

IEE Proceedings: Circuits, Devices and Systems

Volumn 151, Issue 3, 2004, Pages 238-242

  Darwish, M ^a   Yue, C ^a   Lui, K H ^a   Giles, F ^a   Chan, B ^a   Chen, K I ^a   Pattanayak, D ^a   Chen, Q ^a   Terrill, K ^a   Owyang, K ^a  

^a Vishay   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CHARGE; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MANUFACTURE;

GATE DRAIN CHARGE; TRENCH POWER;

MOSFET DEVICES;

EID: 3042513598     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:20040445     Document Type: Article

References (4)

1. Blanchard, R.A et al.: US patent 4,914,058, 3 April, 1990
2. Hshieh, F.-I.: US patent 6,262,453, 17 July, 2001
3. Hueting, R.J.E. et al.: 'Switching performance of low-voltage N-channel trench MOSFETs,' Proc. Int. Symp. on Power semiconductor devices and ICs, ISPSD, June 2002, pp. 177-180
4. Darwich, M et al.: Patents pending