Exceptionally stable vapor delivery of trimethylindium under intense OMVPE growth conditions

Journal of Crystal Growth

Volumn 287, Issue 2, 2006, Pages 679-683

  Shenai Khatkhate, Deodatta V ^a   Ware, Robert A ^a   DiCarlo Jr , Ronald L ^a   Polcari, Robert F ^a   Marsman, Charles J ^a   Woelk, Egbert ^a   Keiter, Alan G ^a  

^a ROHM AND HAAS COMPANY   (United States)

Author keywords

A1. Characterization; A1. Growth models; A1. Vapor delivery; A3. Metalorganic vapor phase epitaxy; B1. Metalorganics; B1. Precursors; B1. Trimethylindium; B2. Semiconducting III V materials

Indexed keywords

COMPOSITION; CRYSTAL GROWTH; EVAPORATION; GROWTH (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; PARAMETER ESTIMATION; VAPOR PHASE EPITAXY;

METALORGANICS; PRECURSORS; SEMICONDUCTING III-V MATERIALS; TRIMETHYLINDIUM; VAPOR DELIVERY;

CRYSTALS;

EID: 30344469905     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.10.095     Document Type: Conference Paper

References (4)

1. M. Timmons, P. Rangarajan, and R. Stennick J. Crystal Growth 221 2000 635
2. D.V. Shenai, M.L. Timmons, R.L. DiCarlo, G.K. Lemnah, and R.S. Stennick J. Crystal Growth 248 2003 91
3. D.V. Shenai, M.L. Timmons, R.L. DiCarlo, and C.J. Marsman J. Crystal Growth 272 2004 603
4. See for example G.B. Stringfellow Organometallic Vapor Phase Epitaxy: Theory and Practice second ed 1999 Academic Press New York and references therein