HBT matrix amplifier with gain-cell enhancing gain and bandwidth

Electronics Letters

Volumn 42, Issue 1, 2006, Pages 22-23

  Chatchaikarn, A ^a   Chen, Y C ^b   Yang, D ^c   Gao, H ^a   Li, G P ^a  

^a University of California at Irvine   (United States)

^b Global Communication Semiconductors   (United States)

^c RF Integrated Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; BROADBAND AMPLIFIERS; GAIN CONTROL; LOGIC DESIGN;

BIPOLAR BROADBAND AMPLIFIERS; GAIN-BANDWIDTH PRODUCTS; GAIN-CELL ENHANCING GAIN; MATRIX AMPLIFIER;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 30344467810     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20063223     Document Type: Article

References (6)

1. Ginzton, E., Hewlett, W.R., Jasberg, J.H., and Noe, J.D.: ' Distributed amplification ', Proc. Inst. Radio Eng., 1948, p. 956-969
2. Niclas, K.B., and Pereira, R.R.: ' The matrix amplifier: a high-gain module for multioctave frequency bands ', IEEE Trans. Microw. Theory Tech., 1987, 35, (3), p. 296-306
3. Streit, D., Lai, R., Gutierrez-Aitken, A., Siddiqui, M., Allen, B., Chau, A., Beale, W., and Oki, A.: ' InP and GaAs components for 40 Gbps applications ', Gallium Arsenide Integrated Circuit Symp. Tech. Dig., 2001, p. 247-250
4. Kobayashi, K.W., Esfandiari, R., and Oki, A.K.: ' A novel HBT distributed amplifier design topology based on attenuation compensation techniques ', IEEE Trans. Microw. Theory Tech., 1994, 42, (12, Parts 1-2), p. 2583-2589
5. Kobayashi, K.W., Esfandiari, R., Hafizi, M.E., Streit, D.C., Oki, A.K., Tran, L.T., Umemoto, D.K., and Kim, M.E.: ' GaAs HBT wideband and low power consumption amplifiers to 24 GHz ', IEEE Trans. Microw. Theory Tech., 1991, 39, (12), p. 2001-2009
6. Gao, H., Chatchaikarn, A., Yang, L.W., and Li, G.P.: ' A new traveling wave matching structure for enhancing the bandwidth of MMIC broadband amplifiers ', IEEE Microw. Wirel. Compon. Lett., 2005, 15, (8), p. 508-509