Observation of a new kinetics to form Ni3Si2 and Ni31Si12 suicides at low temperature (200°C)

Journal of the Electrochemical Society

Volumn 152, Issue 12, 2005, Pages

  Rahman, Md Anisur ^a   Osipowicz, Thomas ^a   Chi, D Z ^b   Wang, W D ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

REACTION KINETICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TEMPERATURE DISTRIBUTION; X RAY DIFFRACTION ANALYSIS;

FOUR-POINT PROBE TECHNIQUES; SILICIDES;

NICKEL COMPOUNDS;

EID: 30344445399     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2077329     Document Type: Article

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