Misfit-dislocation induced surface morphology of InGaAs/GaAs heterostructures

Microchimica Acta

Volumn 145, Issue 1-4, 2004, Pages 267-270

  Yastrubchak, Oksana ^a   Wosiński, Tadeusz ^a   Łusakowska, Elzbieta ^a   Figielski, Tadeusz ^a   Tóth, Attila L ^b  

^a INSTITUTE OF PHYSICS   (Poland)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

AFM; InGaAs layers; Misfit dislocations; Strain relaxation

Indexed keywords

ARSENIC; GALLIUM; INDIUM;

ANISOTROPY; ATOMIC FORCE MICROSCOPY; CHEMICAL STRUCTURE; CONFERENCE PAPER; ELECTRON BEAM; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; STATISTICAL ANALYSIS; STRUCTURE ANALYSIS;

EID: 2942673091     PISSN: 00263672     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00604-003-0165-3     Document Type: Conference Paper

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