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Volumn 95, Issue 11 II, 2004, Pages 7405-7407

Magnetic and structural properties of EuS for magnetic tunnel junction barriers

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC IMPEDANCE; FERROMAGNETIC MATERIALS; MAGNETIC PROPERTIES; MAGNETORESISTANCE; SEMICONDUCTOR JUNCTIONS; SPUTTERING; SUBSTRATES; TUNNEL JUNCTIONS; X RAY DIFFRACTION ANALYSIS;

EID: 2942666314     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1682931     Document Type: Conference Paper
Times cited : (17)

References (18)
  • 3
    • 0034670796 scopus 로고    scopus 로고
    • E.I. Rashba, Phys. Rev. B 62, R16267 (2000); 62, 1884420 (2001).
    • (2001) Phys. Rev. B , vol.62 , pp. 1884420
  • 6
    • 3543116988 scopus 로고
    • L. Esaki, P.J. Stiles, and S. von Molnár, Phys. Rev. Lett. 19, 852 (1967); E. Kisker, G. Baum, A.H. Mahan, W. Raith, and K. Schröder, ibid. 36, 982 (1976); E. Kisker, G. Baum, A.H. Mahan, W. Raith, and B. Reihl, Phys. Rev. B 18, 2256 (1978).
    • (1967) Phys. Rev. Lett. , vol.19 , pp. 852
    • Esaki, L.1    Stiles, P.J.2    Von Molnár, S.3
  • 7
    • 4244210188 scopus 로고
    • L. Esaki, P.J. Stiles, and S. von Molnár, Phys. Rev. Lett. 19, 852 (1967); E. Kisker, G. Baum, A.H. Mahan, W. Raith, and K. Schröder, ibid. 36, 982 (1976); E. Kisker, G. Baum, A.H. Mahan, W. Raith, and B. Reihl, Phys. Rev. B 18, 2256 (1978).
    • (1976) Phys. Rev. Lett. , vol.36 , pp. 982
    • Kisker, E.1    Baum, G.2    Mahan, A.H.3    Raith, W.4    Schröder, K.5
  • 8
    • 0001594872 scopus 로고
    • L. Esaki, P.J. Stiles, and S. von Molnár, Phys. Rev. Lett. 19, 852 (1967); E. Kisker, G. Baum, A.H. Mahan, W. Raith, and K. Schröder, ibid. 36, 982 (1976); E. Kisker, G. Baum, A.H. Mahan, W. Raith, and B. Reihl, Phys. Rev. B 18, 2256 (1978).
    • (1978) Phys. Rev. B , vol.18 , pp. 2256
    • Kisker, E.1    Baum, G.2    Mahan, A.H.3    Raith, W.4    Reihl, B.5
  • 16
    • 2942652210 scopus 로고    scopus 로고
    • C.J.P. Smits et al. (unpublished)
    • C.J.P. Smits et al. (unpublished).
  • 17
    • 0003922106 scopus 로고
    • Springer-Verlag, Berlin
    • The low resistivity of PbS is due to the low gap of 0.4 eV and the location in the conduction band of the electrically active vacancies; see R. Dornhaus, G. Nimtz, and B. Schlicht, Narrow Gap Semiconductors (Springer-Verlag, Berlin, 1983).
    • (1983) Narrow Gap Semiconductors
    • Dornhaus, R.1    Nimtz, G.2    Schlicht, B.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.