Characterization of the spatial charge distribution in local charge-trapping memory devices using the charge-pumping technique

Solid-State Electronics

Volumn 48, Issue 9, 2004, Pages 1525-1530

  Rosmeulen, Maarten ^a,b   Breuil, Laurent ^a   Lorenzini, Martino ^a   Haspeslagh, Luc ^a   Van Houdt, Jan ^a   De Meyer, Kristin ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Channel hot electron injection; Charge pumping; Deconvolution; Lateral charge distribution; Localized trapping; Non volatile memory

Indexed keywords

COMPUTATIONAL METHODS; CONVOLUTION; DEGRADATION; HOT CARRIERS; INTEGRATION; PARAMETER ESTIMATION; SILICON COMPOUNDS; SUBSTRATES; THERMOANALYSIS;

CHANNEL-HOT-ELECTRON-INJECTION; CHARGE-PUMPING; DECONVOLUTION; LATERAL CHARGE DISTRIBUTION; LOCALIZED TRAPPING; NON-VOLATILE MEMORY;

DATA STORAGE EQUIPMENT;

EID: 2942650616     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.03.017     Document Type: Conference Paper

References (5)

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4. Groeseneken G., Maes H.E. Basics and applications of charge pumping in submicron MOSFETs (Invited). Microelectron. Reliab. 38:1998;1379-1389.
5. Rosmeulen M., Sleeckx E., De Meyer K. Silicon-rich-oxides as an alternative charge-trapping medium in Fowler-Nordheim and hot carrier type non-volatile-memory cells. IEEE IEDM Tech. Proc. 2002;189-192.