Oxygen codoping of ZnS:Tb,F electroluminescent thin film

Journal of Luminescence

Volumn 109, Issue 2, 2004, Pages 75-83

  Kim, J P ^a   Davidson, M R ^b   Puga Lambers, M ^b   Lambers, E ^a   Holloway, P H ^a,b  

^a University of Florida   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

Electroluminescence; Phosphor; Sputter deposition; Thin film; ZnS:TbOF

Indexed keywords

ARGON; BINDING ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PHOSPHORUS; POSITIVE IONS; SPUTTER DEPOSITION; ZINC SULFIDE;

GLASS SUBSTRATES; INTERSTITIAL SITES; VOLTAGE DROP; ZNS:TBOF;

THIN FILMS;

EID: 2942648669     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2003.12.054     Document Type: Article

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