Visible cathodoluminescence from Eu-implanted single- and polycrystal c-BN annealed under high-temperature, high-pressure conditions

Applied Physics Letters

Volumn 84, Issue 21, 2004, Pages 4286-4288

  Vetter, Ulrich ^a   Hofsäss, Hans ^a   Taniguchi, Takashi ^b  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CUBIC BORON NITRIDE; DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; EUROPIUM; HIGH PRESSURE EFFECTS; HIGH TEMPERATURE OPERATIONS; ION IMPLANTATION; PHONONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; SPECTROSCOPIC ANALYSIS;

BAND GAPS; DEIONIZATION; HIGH-RESOLUTION STARK LEVEL SPECTROSCOPY; TIME-RESOLVED CATHODOLUMINESCENCE SPECTROSCOPY;

CATHODOLUMINESCENCE;

EID: 2942640193     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1753053     Document Type: Article

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