Reliability of ultra thin oxide and nitride films in the 1 nm to 2 nm range

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 51-54

  Yuwono, B ^a   Schloesser, T ^a   Gschwandtner, A ^a   Innertsberger, G ^a   Grassl, A ^a   Olbrich, A ^a   Krautschneider, W H ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b HAMBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC FILMS; GATES (TRANSISTOR); MOSFET DEVICES; NITRIDES; OXIDES; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS;

ULTRATHIN OXIDES;

SEMICONDUCTING FILMS;

EID: 0033190144     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00336-6     Document Type: Article

References (3)

1. Semiconductor Industry Association, Roadmap, 1997.
2. H.S. Momose et al., IEEE Trans. Electr. Dev., vol. 45, p. 691, 1998.
3. A. Olbrich et al., Proc. IRPS, p. 163, 1998.