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Volumn 459, Issue 1-2, 2004, Pages 169-173

Self-selection in size and structure in argon clusters formed on amorphous carbon

Author keywords

Argon; Crystal growth; Electrondiffraction; Molecular clusters; Structure

Indexed keywords

AMORPHOUS MATERIALS; ARGON; CARBON; CRYSTAL GROWTH; CRYSTALLOGRAPHY; HIGH ENERGY ELECTRON DIFFRACTION; NUCLEATION; SUPERSATURATION;

EID: 2942615169     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.12.126     Document Type: Conference Paper
Times cited : (17)

References (29)
  • 26
    • 2942535276 scopus 로고    scopus 로고
    • note
    • Preference of MTPs in growth 'inward' processes follows from the surface energy minimum requirement that drives the structures formed when crystallization starts at a cluster surface. In the sequence icosahedra-decahedra-hcp-fcc clusters the surface energy grows from the first to the latest items because it depends on cluster terminations by certain surface planes. Only the most favorable (111)-like planes are realized at icosahedra surfaces (surface atoms have here 9 nearest neighbours (NN)); the mixture of (111) (dominant) and (100) (with 8 NN) planes exists at decahedra surfaces; (001) (9 NN) and (111) (on an average 8.5 NN) planes coexist at optimized hcp clusters surfaces; (111) and (100) planes in comparable parts are present at cuboctahedra surfaces (see Fig. 3, the top inset).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.