Quantification issues of trace metal contaminants on silicon wafers by means of TOF-SIMS, ICP-MS, and TXRF

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 720-724

  Rostam Khani, P ^a   Hopstaken, M J P ^b   Vullings, P ^a   Noij, G ^a   O'Halloran, O ^a   Claassen, W ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

ICP MS; Quantification; TOF SIMS; Trace metals; TXRF; VPD

Indexed keywords

CONTAMINATION; DECOMPOSITION; FLUORESCENCE; INDUCTIVELY COUPLED PLASMA; INTERFACES (MATERIALS); SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; SURFACE PHENOMENA;

QUANTIFICATION; TIME OF FLIGH STATIC SECONDARY ION MASS SPECTROMETRY (TOF-SSIMS); TOTAL REFLECTION X RAY FLUORESCENCE (TXRF); TRACE METALS; VAPOR PHASE DECOMPOSITION (VPD);

SURFACE CHEMISTRY;

EID: 2942614992     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.030     Document Type: Conference Paper

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