Peculiarities of thin film deposition by means of reactive impulse plasma assisted chemical vapor deposition (RIPACVD) method

Thin Solid Films

Volumn 459, Issue 1-2, 2004, Pages 160-164

  Werbowy, Aleksander ^a   Olszyna, Andrzej ^a   Zdunek, Krzysztof ^a   Sokołowska, Aleksandra ^b   Szmidt, Jan ^a   Barcz, Adam ^c  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

Impulse plasma deposition; Ion dynamic mixing; Nanocrystalline nitride and oxide films; Semiconductor dielectric interface

Indexed keywords

CRYSTALLIZATION; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); MIXING; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; ROTATION; SPECTROSCOPIC ANALYSIS;

IMPULSE PLASMA DEPOSITION; ION DYNAMIC MIXING; NANOCRYSTALLINE NITRIDE AND OXIDE FILMS; SEMICONDUCTOR/DIELECTRIC INTERFACES;

THIN FILMS;

EID: 2942597660     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.12.122     Document Type: Conference Paper

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