The effect of an interfacial layer on the relaxation of CdMnTe/CdTe multiple quantum well structures on InSb substrates

Semiconductor Science and Technology

Volumn 13, Issue 7, 1998, Pages 746-749

  Lif, C R ^a,c   Tanner, B K ^a   Ashenford, D E ^b   Hogg, J H C ^b   Lunn, B ^b  

^a DURHAM UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF HULL   (United Kingdom)

^c INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; INTERFACES (MATERIALS); RELAXATION PROCESSES; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION;

CADMIUM MANGANESE TELLURIDE; INTERFACIAL LAYER;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032117646     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/7/014     Document Type: Article

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