Highly resistive p-PbTe films with carrier concentration as low as 10 14 cm-3

Applied Physics Letters

Volumn 84, Issue 19, 2004, Pages 3732-3734

  Sandomirsky, V ^a   Butenko, A V ^a   Kolobov, I G ^a,c   Ronen, A ^a   Schlesinger, Y ^a   Sipatov, A Yu ^b   Volubuev, V V ^b  

^a BAR ILAN UNIVERSITY   (Israel)

^b NATIONAL TECHNICAL UNIVERSITY   (Ukraine)

^c B VERKIN INSTITUTE FOR LOW TEMPERATURE PHYSICS AND ENGINEERING   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTATIONAL METHODS; DEPOSITION; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; HALL EFFECT; INTERFACES (MATERIALS); POLYCRYSTALLINE MATERIALS; SEEBECK EFFECT; SEMICONDUCTING FILMS; SUBSTRATES;

DEBYE SCREENING LENGTH; FILM THICKNESS; SEEBECK COEFFICIENTS;

SEMICONDUCTING LEAD COMPOUNDS;

EID: 2942578203     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1728319     Document Type: Article

References (7)

1. V. Sandomirsky, Y. Schlesinger, A. V. Butenko, I. G. Kolobov, and A. Ronen, Physica B 329-333, 1521 (2003); V. Sandomirsky, A. V. Butenko, R. Levin, and Y. Schlesinger, J. Appl. Phys. 90, 2370 (2001), and references therein.
2. V. Sandomirsky, Y. Schlesinger, A. V. Butenko, I. G. Kolobov, and A. Ronen, Physica B 329-333, 1521 (2003); V. Sandomirsky, A. V. Butenko, R. Levin, and Y. Schlesinger, J. Appl. Phys. 90, 2370 (2001), and references therein.
3. G. D. Mahan, Solid State Phys. 51, 81 (1998).
4. D. Khokhlov, "Infrared Photodetectors Based on Doped Lead Tellurides," in Lead Chalcogenides: Physics & Applications, Vol. 18, edited by M. O. Manasreh (Taylor and Francis, London, 2003), p. 617.
5. G. Nimtz and B. Schlicht, "Narrow-Gap Lead Salts," in Narrow-Gap Semiconductors, Springer Tracts in Modern Physics, Vol. 98 (Springer, Berlin, 1983), p. 1.
6. Yu. I. Ravich, "Lead Chalcogenides: Basic Physical Features," in Ref. 3. p. 3.
7. L. Ryabova and B. Akimov, "Doped Lead Chalcogenides," in Ref. 3, p. 427.