Electric-field-affect thermoelectrics

Journal of Applied Physics

Volumn 90, Issue 5, 2001, Pages 2370-2379

  Sandomirsky, V ^a   Butenko, A V ^a   Levin, R ^b   Schlesinger, Y ^a  

^a BAR ILAN UNIVERSITY   (Israel)

^b ARIEL UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040028983     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1389074     Document Type: Article

References (24)

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18. It is clear that in realistic circumstances carrier scattering by optical phonons or other scattering processes should be also taken into account. The formalism presented here allows us to consider any scattering mechanism. However, the present calculations are for an illustrative purpose only, thus simplifying conditions are assumed.
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20. 4 There, the carrier concentration and their mobility, which serve as the decisive factors, are largely determined by the temperature. On the other hand, at EFE doping the carrier concentration is determined by the electrical displacement D, and not by the temperature. Actually, the carrier concentrations of the uncharged intrinsic layer and the same layer when charged, at the same T, differ by several orders of magnitude. The temperature determines other properties, e.g., the dielectric constant. Thus, the optimal values of M in the chemically doped and in the EFE-doped samples may differ and be located at different T. In the present illustrative analysis we consider a simplified model of PbTe (in particular, we do not take into account the T dependence of mobility), and we also do not carry out the full optimization over T, D. and L.
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