Small bond angles in amorphous silicon: Are they a new type of defect?

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 425-429

  Kugler, S ^a   Kohary, K ^a,b   Kadas K ^a   Pusztai, L ^c  

^a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

^b UNIVERSITY OF OXFORD   (United Kingdom)

^c WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTATIONAL METHODS; COMPUTER SIMULATION; CORRELATION METHODS; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; MONTE CARLO METHODS; NEUTRON DIFFRACTION;

CONTINUOUS RANDOM NETWORK (CRN) MODEL; KEATING POTENTIAL; SMALL BOND ANGLES; WWW MODEL;

AMORPHOUS SILICON;

EID: 2942555185     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.03.011     Document Type: Conference Paper

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