Structure of ferromagnetic CrAs epilayers grown on GaAs(001)

Physical Review Letters

Volumn 92, Issue 16, 2004, Pages

  Etgens, V H ^a   De Camargo, P C ^a,d   Eddrief, M ^a   Mattana, R ^b   George, J M ^b   Garreau, Y ^c  

^a UNIVERSITÉ PIERRE ET MARIE CURIE   (France)

^b INSTITUT D'OPTIQUE GRADUATE SCHOOL   (France)

^c SYNCHROTRON SOLEIL   (France)

^d FEDERAL UNIVERSITY OF PARANÁ   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BAND STRUCTURE; CRYSTAL GROWTH FROM MELT; FERROELECTRIC MATERIALS; FERROMAGNETISM; HIGH RESOLUTION ELECTRON MICROSCOPY; LATTICE CONSTANTS; MAGNETIC MOMENTS; MAGNETIZATION; MOLECULAR BEAM EPITAXY; PHASE EQUILIBRIA; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

DOMAIN BOUNDARIES; GRAZING INCIDENCE X-RAY DIFFRACTION (GIXD); GROWTH CONDITIONS; MAGNETIC STRUCTURE; METASTABLE PHASE; ORTHORHOMBIC PHASE;

CHROMIUM COMPOUNDS;

EID: 2942553055     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.92.167205     Document Type: Article

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