MBE growth and properties of 3d transition metal-doped GaAs

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 10, Issue 1-3, 2001, Pages 229-232

  Okazawa, Daisuke ^a   Yamamoto, Kansyo ^a   Nagashima, Ayato ^a   Yoshino, Junji ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Chemical trend; Diluted magnetic semiconductors; GaAs; Magnetic properties; Transition metals

Indexed keywords

CHROMIUM; COBALT; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON ENERGY LEVELS; FERROMAGNETISM; LOW TEMPERATURE EFFECTS; MAGNETIC PROPERTIES; MAGNETIZATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUPERPARAMAGNETISM;

COULOMB GAP; DILUTED MAGNETIC SEMICONDUCTORS;

MAGNETIC SEMICONDUCTORS;

EID: 0035337632     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(01)00088-1     Document Type: Article

References (7)