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Volumn 6, Issue 5, 2002, Pages 455-464

Growth chemistry of amorphous silicon and amorphous silicon-germanium alloys

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY; CRYSTALLIZATION; DEPOSITION; GERMANIUM; METALLURGY; SILICON;

EID: 0036820208     PISSN: 13590286     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-0286(02)00105-5     Document Type: Article
Times cited : (14)

References (79)
  • 34
    • 0029515877 scopus 로고
    • This paper shows clearly the presence of different kinds of voids in a-Si and a-(Si,Ge):H. The void density is shown to depend on deposition conditions
    • (1995) Proc of Mater Res Soc , vol.377 , pp. 251
    • Williamson, D.L.1
  • 35
    • 0022895813 scopus 로고
    • This is an extremely important paper, because Carlson suggests that the major cause of instability is poorly bonded Si-H at internal surfaces of voids
    • (1986) Appl Phys A , vol.41 , pp. 305
    • Carlson, D.E.1
  • 49
    • 67650460517 scopus 로고    scopus 로고
    • 173 The author suggests that the fundamental limitation to the growth of a-Si is the removal of hydrogen, and that ions play a major role in this removal
    • (2001) Thin Solid Films , vol.395
    • Dalal, V.L.1
  • 51
    • 0001374901 scopus 로고    scopus 로고
    • The authors, using molecular dynamics simulations, show that H atoms bonded in close proximity to each other give rise to Staebler-Wronski instability
    • (1998) Appl Phys Lett , vol.72 , pp. 371
    • Biswas, R.1    Pan, B.C.2
  • 57
    • 0001388182 scopus 로고    scopus 로고
    • The authors show that all the properties of ade (Si,Ge):H, including optical gap, depend on plasma conditions, with low pressure, high energy and high ion bombardment plasma producing significantly better materials
    • (2000) J Non-Cryst Solids , vol.266 , pp. 675
    • Dalal, V.L.1    Haroon, S.2    Zhou, Z.3    Maxson, T.4    Han, K.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.