P- and n-type microcrystalline Si1-xCx fabricated by plasma CVD with 40.68-MHz excitation source

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 106-109

  Toyama, T ^a   Nakano, Y ^a   Ichihara, T ^a   Okamoto, H ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; DECOMPOSITION; DOPING (ADDITIVES); ELECTRON CYCLOTRON RESONANCE; OPTOELECTRONIC DEVICES; OXYGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; SPUTTERING; VOLUME FRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON CYCLOTRON RESONANCE (ECR); EXCITATION FREQUENCIES; GAS FLOW RATES; OPTICAL ENERGY GAPS;

SILICON CARBIDE;

EID: 2942534404     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.02.031     Document Type: Conference Paper

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