Comparison of AC and DC constant photocurrent methods for determination of defect densities

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 228-231

  Main, C ^a   Reynolds, S ^a   Zrinscak I ^a   Merazga, A ^b  

^a UNIVERSITY OF ABERTAY DUNDEE   (United Kingdom)

^b UNIVERSITY OF BISKRA   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; ELECTRON MOBILITY; FERMI LEVEL; HOLE MOBILITY; LIGHT ABSORPTION; MATHEMATICAL MODELS; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON ALLOYS;

CONSTANT PHOTOCURRENT METHOD (CPM); PHOTOCONDUCTIVE RESPONSE; PHOTON ENERGIES; THERMAL EMISSION;

CRYSTAL DEFECTS;

EID: 2942525498     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.02.059     Document Type: Conference Paper

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