Ultra-low frequency CPM of a-Si:H and relaxation

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 544-547

  Hasegawa, S ^a,b   Nitta, S ^a   Nonomura, S ^a  

^a GIFU UNIVERSITY   (Japan)

^b SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ELECTRIC VARIABLES MEASUREMENT; NATURAL FREQUENCIES; RELAXATION PROCESSES;

CONSTANT PHOTOCURRENT METHOD; HYDROGENATED AMORPHOUS SILICON; ULTRA LOW FREQUENCY;

AMORPHOUS SILICON;

EID: 0030563557     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00758-X     Document Type: Article

References (9)

1. H.G. Grimmeiss and L.-A. Ledebo, J. Appl. Phys. 46 (1975) 2155.
2. M. Vanecek, J. Kocka, J. Stuchlik and A. Triska, Solid State Commun. 39 (1981) 1199.
3. N.M. Amer and W.B. Jackson, in: Semiconductors and Semimetals, Vol. 21-B, ed. by Pankove (Academic Press, New York, 1984) p. 83.
4. S. Nonomura, T. Nishiwaki, S. Kusakabe, E. Nishimura, T. Itoh and S. Nitta, J. Non-Cryst. Solids 164-166 (1993) 359.
5. S. Nonomura, T. Nishiwaki and S. Nitta, Phil. Mag. B 69 (1994) 335.
6. K. Hattori, S. Fukuda, Nishimura, H. Okamoto and Y. Hamakawa, J. Non-Cryst. Solids 164-166 (1993) 351.
7. R. Platz, R. Bruggemann and G.H. Bauer, J. Non-Cryst. Solids 164-166 (1993) 355.
8. J.G. Simmons and G.W. Taylor, Phys. Rev. 122 (1972) 553.
9. W. Jackson, J. Non-Cryst. Solids 164-166 (1993) 263.