Novel materials for improved quality of RF-PA in base-station applications

IEEE Transactions on Components and Packaging Technologies

Volumn 28, Issue 4, 2005, Pages 644-649

  Radivojevic, Zoran ^a   Andersson, Klas ^a   Bogod, Leonid ^a   Mahalingam, Mali ^b   Rantala, Jukka ^a   Wright, Jonathan ^c  

^a NOKIA RESEARCH CENTER   (United States)

^b RF Division   (United States)

^c Freescale Semiconductor   (Finland)

Author keywords

Cu laminate flange structures; Laterally diffused metal oxide semiconductor (LDMOS); Radio frequency power amplifier (RF PA)

Indexed keywords

COPPER ALLOYS; ELECTRONICS PACKAGING; FINITE ELEMENT METHOD; HEAT RESISTANCE; HEAT SINKS; LAMINATES; MECHANICAL PROPERTIES; MOSFET DEVICES; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; STRESS ANALYSIS; THERMAL CONDUCTIVITY;

COPPER LAMINATE FLANGE STRUCTURES; LATERALLY DIFFUSED METAL-OXIDE-SEMICONDUCTOR (LDMOS); RADIO FREQUENCY POWER AMPLIFIER (RF-PA); THERMAL COUPLING;

POWER AMPLIFIERS;

EID: 29244459153     PISSN: 15213331     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAPT.2005.859743     Document Type: Article

References (5)

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