Extraction method for the impact-ionization multiplication factor in silicon at large operating temperatures

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 227-230

  Gnani, E ^a   Reggiani, S ^a   Rudan, M ^a   Baccarani, G ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; EXTRACTION; IONIZATION; SILICON; STRUCTURAL OPTIMIZATION;

EXTENDED RANGE; EXTRACTION METHOD; INFINEONS; MULTIPLICATION FACTOR; OPERATING TEMPERATURE; TEST STRUCTURE;

IMPACT IONIZATION;

EID: 29244438723     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194911     Document Type: Conference Paper

References (4)

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2. S. Reggiani et al., IEEE Trans. ED, vol. 45, no. 9, p. 2010- 2017, 1998.
3. ISE Integrated Systems Engineering AG, ISE TCAD Manuals, V. 7.0, Part 12: DESSIS, 2000.
4. I. Takayanagi et al., J. Appl. Phys., vol. 72, no. 5, p. 1989- 1992, 1992.