Self-assembly of steps and vacancy lines during the early stages of Ge/Si (001) heteroepitaxy

Applied Physics Letters

Volumn 87, Issue 25, 2005, Pages 1-3

  Tambe, D T ^a   Ciobanu, C V ^b   Shenoy, V B ^a  

^a Brown University   (United States)

^b Department of Geology and Geological Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC SIMULATIONS; HETEROEPITAXY; ROUGHENING; SPATIAL ORGANIZATIONS; VACANCY LINES;

COMPUTER SIMULATION; ELASTICITY; SELF ASSEMBLY; STRETCHING; SURFACE ROUGHNESS; WETTING;

EPITAXIAL GROWTH;

EID: 29144534659     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2147720     Document Type: Article

References (8)

1. P. Sutter and M. G. Lagally, Phys. Rev. Lett. 84, 4637 (2000).
2. R. M. Tromp, F. M. Ross, and M. C. Reuter, Phys. Rev. Lett. 84, 4640 (2000).
3. P. Sutter, I. Schick, W. Ernst, and E. Sutter, Phys. Rev. Lett. 91, 176102 (2003).
4. J. Tersoff, Phys. Rev. B 39, 5566 (1989).
5. C. V. Ciobanu, D. T. Tambe, and V. B. Shenoy, Surf. Sci. 556, 171 (2004).
6. V. I. Marchenko, Sov. Phys. JETP 54, 605 (1981).
7. O. L. Alerhand, D. Vanderbilt, R. D. Meade, and J. D. Joannopoulos, Phys. Rev. Lett. 61, 1973 (1988).
8. T. W. Poon, S. Yip, P. S. Ho, and F. F. Abraham, Phys. Rev. B 45, 3521 (1992).