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Volumn 44, Issue 33, 2005, Pages 7191-7195

Multilayer silicon cavity mirrors for the far-infrared p-Ge laser

Author keywords

[No Author keywords available]

Indexed keywords

ETALONS; INFRARED RADIATION; LASERS; MULTILAYERS; SILICON;

EID: 29144500279     PISSN: 1559128X     EISSN: 15394522     Source Type: Journal    
DOI: 10.1364/AO.44.007191     Document Type: Article
Times cited : (7)

References (11)
  • 2
    • 10044246079 scopus 로고    scopus 로고
    • High reflectivity intracavity Bragg mirrors for the far-infrared p-Ge laser
    • Terahertz for Military and Security Applications II, M. Novak, ed.
    • T. W. Du Bosq, A. V. Muravjov, and R. E. Peale, "High reflectivity intracavity Bragg mirrors for the far-infrared p-Ge laser," in Terahertz for Military and Security Applications II, M. Novak, ed., Proc. SPIE 5411, 167-173 (2004).
    • (2004) Proc. SPIE , vol.5411 , pp. 167-173
    • Du Bosq, T.W.1    Muravjov, A.V.2    Peale, R.E.3
  • 4
    • 5444231139 scopus 로고    scopus 로고
    • Widely tunable far-infrared hot-hole semiconductor lasers
    • H. K. Choi, ed. (Wiley)
    • E. Bründermann, "Widely tunable far-infrared hot-hole semiconductor lasers," in Long-Wavelength Infrared Semiconductor Lasers, H. K. Choi, ed. (Wiley, 2004), pp. 279-350.
    • (2004) Long-wavelength Infrared Semiconductor Lasers , pp. 279-350
    • Bründermann, E.1
  • 8
    • 0015587037 scopus 로고
    • Optical constants of far infrared materials. 2: Crystalline solids
    • E. W. Loewenstein, D. R. Smith, and R. L. Morgan, "Optical constants of far infrared materials. 2: Crystalline solids," Appl. Opt. 12, 398-406 (1973).
    • (1973) Appl. Opt. , vol.12 , pp. 398-406
    • Loewenstein, E.W.1    Smith, D.R.2    Morgan, R.L.3
  • 9
    • 0242635677 scopus 로고    scopus 로고
    • Fixed wavelength selection for the far-infrared p-Ge laser using thin silicon intracavity etalon
    • Solid State Lasers XII, R. Scheps, ed.
    • T. W. Du Bosq, R. E. Peale, A. V. Muravjov, and C. J. Fredricksen, "Fixed wavelength selection for the far-infrared p-Ge laser using thin silicon intracavity etalon," in Solid State Lasers XII, R. Scheps, ed., Proc. SPIE 4968, 119-125 (2003).
    • (2003) Proc. SPIE , vol.4968 , pp. 119-125
    • Du Bosq, T.W.1    Peale, R.E.2    Muravjov, A.V.3    Fredricksen, C.J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.