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Volumn 66, Issue 11, 2005, Pages 1994-1999

Defect properties of CuInSe2 and CuGaSe2

Author keywords

D. Defects; D. Electronic structure

Indexed keywords

CRYSTAL DEFECTS; ELECTRONIC STRUCTURE; PHASE TRANSITIONS;

EID: 29144482696     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2005.10.003     Document Type: Conference Paper
Times cited : (93)

References (35)
  • 28
    • 29144441438 scopus 로고    scopus 로고
    • note
    • Due to the finite supercell size used in our calculation and the LDA band gap error, the uncertainty in the calculated transition energy levels is about 0.1 eV for acceptors and 0.2 eV for donors
  • 33
    • 29144511563 scopus 로고    scopus 로고
    • note
    • 12 are 1.38, 1.28, and 1.23 eV, respectively, all larger than the 1.04 eV gap of CIS.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.