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Volumn 348, Issue 3-6, 2006, Pages 416-423
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Study of GaAs cluster ions using FP-LMTO MD method
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Author keywords
Binding energy; Cluster ions; Ground state structure
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Indexed keywords
ATOMS;
BINDING ENERGY;
GALLIUM ARSENIDE;
GROUND STATE;
III-V SEMICONDUCTORS;
MOLECULAR DYNAMICS;
CLUSTER IONS;
ELECTRONIC AND GEOMETRIC STRUCTURES;
ELECTROSTATIC REPULSION;
FP-LMTO MD METHOD;
GROUND-STATE STRUCTURES;
LOWEST ENERGY STRUCTURE;
NEUTRAL CLUSTERS;
STRUCTURAL DISTORTIONS;
IONS;
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EID: 29144446132
PISSN: 03759601
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physleta.2005.08.071 Document Type: Article |
Times cited : (9)
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References (32)
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