Structural, electrical and optical properties of AgInS2 thin films grown by thermal evaporation method

Journal of Physics and Chemistry of Solids

Volumn 66, Issue 11, 2005, Pages 1858-1861

  Akaki, Y ^a   Kurihara, S ^a   Shirahama, M ^a   Tsurugida, K ^a   Seto, S ^b   Kakeno, T ^c   Yoshino, K ^c  

^a MIYAKONOJO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b ISHIKAWA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c UNIVERSITY OF MIYAZAKI   (Japan)

Author keywords

A. Inorganic compounds; A. Semiconductors; A. Thin films; D. Defects; D. Electrical properties

Indexed keywords

ANNEALING; DEFECTS; EVAPORATION; FILM GROWTH; INORGANIC COMPOUNDS; SEMICONDUCTOR MATERIALS; SILVER COMPOUNDS; SULFUR; X RAY DIFFRACTION ANALYSIS;

ELECTRICAL PROPERTIES; ELECTRON PROBE MICRO ANALYSIS (EPMA); THERMAL EVAPORATION;

THIN FILMS;

EID: 29144443693     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2005.09.005     Document Type: Conference Paper

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