Bandlike and localized defect states in CuInSe2 solar cells

Journal of Physics and Chemistry of Solids

Volumn 66, Issue 11, 2005, Pages 1855-1857

  AbuShama, Jehad A M ^a   Johnston, S ^a   Noufi, R ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

A. Copper indium diselenide; A. CuInSe2; A. Thin films; C. Deep level transient spectroscopy; D. Electrical properties

Indexed keywords

ACTIVATION ENERGY; COPPER COMPOUNDS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; ELECTRON TRAPS; HIGH TEMPERATURE EFFECTS; POLYCRYSTALLINE MATERIALS; THIN FILMS;

COPPER INDIUM DISELENIDE; CUINSE2; DEFECT STATES; PULSE DURATION;

SOLAR CELLS;

EID: 29144436627     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2005.09.004     Document Type: Conference Paper

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