Charge collection inefficiencies induced by intense 12C bombardment of SSB detectors

IEEE Transactions on Nuclear Science

Volumn 52, Issue 5 III, 2005, Pages 1785-1791

  Aguilera, E F ^a,b,c   Rosales, P ^a,b   Ramirez Jimenez F J ^a,b  

^a IEEE   (Mexico)

^b INSTITUTO NACIONAL DE INVESTIGACIONES NUCLEARES   (Mexico)

^c UNIVERSIDAD AUTÓNOMA DEL ESTADO DE MÉXICO   (Mexico)

Author keywords

Ion fluence; Pulse height defect; Rutherford backscattering; Silicon detector

Indexed keywords

ION FLUENCE; PULSE HEIGHT EFFECT; SILICON DETECTOR;

CARBON; RADIATION DAMAGE; RADIATION DETECTORS;

HEAVY IONS;

EID: 29144434623     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.856754     Document Type: Article

References (25)

1. N. Tsoulfanidis, Measurement and Detection of Radiation. New York: Taylor & Francis, 1995.
2. B. D. Wilkins, M. J. Fluss, S. B. Kaufman, C. E. Gross, and E. P. Steimberg, "Pulse-height defects for heavy ions in a silicon surface-barrier detector," Nucl. Instrum. Methods, vol. 92, pp. 381-391, 1971.
3. E. C. Finch et al., "Measurements of the pulse height defect and its mass dependence for heavy-ion silicon detectors," Nucl. Instrum. Methods, vol. 113, pp. 29-40, 1973.
4. M. Ogihara, Y. Nagashima, W. Galster, and T. Mikumo, "Systematic measurements of pulse height defects for heavy ions in surface-barrier detectors," Nucl. Instrum. Methods Phys. Res. A, vol. 251, pp. 313-320, 1986.
5. 81Br ions in silicon surface barrier detectors," Nucl. Instrum. Methods Phys. Res. B, vol. 45, pp. 270-274, 1990.
6. W. N. Lennard et al., "Nonlinear response of Si detectors for low-Z ions," Nucl. Instrum. Methods Phys. Res. A, vol. 248, pp. 454-460, 1986.
7. H. Funaki, M. Mashimo, M. Shimizu, Y. Oguri, and E. Arai, "Pulse height defect of low energy ions in surface barrier detectors," Nucl. Instrum. Methods Phys. Res. B, vol. 56/57, pp. 975-977, 1991.
8. W. Hösler and R. Darji, "On the nonlinearity of silicon detectors and the energy calibration in RBS," Nucl. Instrum. Methods Phys. Res. B, vol. 85, pp. 602-606, 1994.
9. C. Lee and N. R. Fletcher, "Parametrization of the pulse height defect and resolution for low-Z ions incident on silicon barrier detectors," Nucl. Instrum. Methods Phys. Res. A, vol. 432, pp. 313-317, 1999.
10. H. J. Whitlow and Y. Zhang, "Fundamentals effects and nonlinear Si detector response," Nucl. Instrum. Methods Phys. Res. B, vol. 190, pp. 375-378, 2002.
11. E. Steinbauer et al., "Energy resolution of silicon detectors: Approaching the physical limit," Nucl. Instrum. Methods Phys. Res. B, vol. 85, pp. 642-649, 1994.
12. A. Menchaca-Rocha, R. Alfaro, E. Belmont-Moreno, and A. Martínez-Dáalos, "Interpretation of nonlinear Si p-i-n detector response data to low-Z ions," Nucl. Instrum. Methods Phys. Res. B, vol. 201, pp. 426-430, 2003.
13. A. Menchaca-Rocha, J. I. Cabrera, R. Alfaro, E. Belmont-Moreno, and A. Martínez-Dávalos, "A new aproach to deal with nonlinearities in Si detector response," Nucl. Instrum. Methods Phys. Res. B, vol. 207, pp. 356-367, 2003.
14. G. F. Knoll, Radiation Detection and Measurement: Wiley, 1979, ch. New York.
15. H. W. Kraner, "Radiation damage in semiconductors detectors," IEEE Trans. Nucl. Sci., vol. NS-29, no. 3, pp. 1088-1095, Jun. 1982.
16. _, "Radiation damage in silicon detectors," Nucl. Instrum. Methods, vol. 225, pp. 615-618, 1984.
17. H. Dijkstra and J. Libby, "Overview of silicon detectors," Nucl. Instrum. Methods Phys. Res. A, vol. 494, pp. 86-93, 2002.
18. F. J. Ramírez-Jiménez, E. F. Aguilera, R. López-Callejas, J. S. Benítez-Read, and J. Pacheco-Sotelo, "A novel application of a PIN diode-preamplifier set for the measurement of charged particles," Nucl. Instrum. Methods Phys. Res. A, vol. 545, pp. 721-726, 2005.
19. 12 C," Rev. Mex. Fis., vol. 49, no. Suppl. 4, pp. 88-91, 2003.
20. W.-K. Chu, J. W. Mayer, and M.-A. Nicolet, Backscattering Spectrometry. New York: Academic, 1978.
21. M. Mayer, "SIMNRA User's Guide," Max-Planck-Institut fur Plasmaphysik, Garching, Germany, Rep. IPP 9/113, 1997.
22. E. F. Aguilera, E. Martinez-Quiroz, H. M. Berdejo, and M. C. Fernández, "General method for thickness determination of thin backed films. New formulation of backscattering spectrometry," Rev. Mex. Fis., vol. 41, pp. 507-523, 1995.
23. G. Blondiaux, M. Valladon, L. Quaglia, G. Robaye, G. Weber, and J. L. Debrun, "Study of growth of Carbon on targets during ion bombardment, " Nucl. Instrum. Methods, vol. 227, pp. 19-23, 1984.
24. M. Moll, "Radiation Damage in Silicon Particle Detectors," Ph.D. dissertation, Institute for Experimental Physics, Hamburg Univ., Hamburg, Germany, 1999.
25. W. N. Lennard and G. R. Massoumi, "Anomalous pulse heights in silicon detectors," Nucl. Instrum. Methods Phys. Res. B, vol. 48, pp. 47-50, 1990.