Temperature characteristics of stress-induced migration based on atom migration

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 6, 2005, Pages 2384-2389

  Aoyagi, Minoru ^a  

^a NIPPON INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; RELAXATION PROCESSES; STRESS ANALYSIS;

ATOM MIGRATION; METAL INTERCONNECTIONS; STRESS-INDUCED MIGRATION;

SEMICONDUCTOR DEVICES;

EID: 29044438211     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2123447     Document Type: Article

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