Comparison of the submicron particle analysis capabilities of Auger electron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy with energy dispersive x-ray spectroscopy for particles deposited on silicon wafers with 1 μm thick oxide layers

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1825-1831

  Diebold, Alain C ^a   Lindley, Patricia ^b   Viteralli, Jim ^c   Kingsley, Jeff ^c   Liu, Benjamin Y H ^d   Woo, Keung Shan ^d  

^a SEMATECH   (United States)

^b Physical Electronics Inc Minnesota   (United States)

^c CHARLES EVANS AND ASSOCIATES   (United States)

^d UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DISPERSIVE X RAY SPECTROSCOPY; OXIDATION STATE; PARTICLE ANALYSIS; SUB-MICRON PARTICLES; THERMALLY GROWN OXIDE; THICK OXIDES; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY; TIO;

AUGERS; MASS SPECTROMETERS; MEASUREMENT THEORY; SCANNING ELECTRON MICROSCOPY; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SPECTROMETRY; SPECTRUM ANALYSIS; X RAY SPECTROSCOPY;

AUGER ELECTRON SPECTROSCOPY;

EID: 28744455429     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581417     Document Type: Article

References (5)

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5. K.-S. Woo and B. Y. H. Liu, "A Particle Deposition System for the Preparation of Standard Calibration Wafers," for presentation at the 43rd Annual Technical Meeting, Institute of Environmental Sciences, Los Angeles, California, May 4-8 (1997).