The effective damage-free magasonic cleaning using N2 dissolved APM

IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings

Volumn , Issue , 2005, Pages 215-218

  Hagimoto, Yoshiya ^a   Asada, Kazumi ^a   Iwamoto, Hayato ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; HYDROGEN PEROXIDE; NITROGEN; SILICON WAFERS;

CLEAN WAFERS; MEGASONIC CLEANING; SEMICONDUCTOR MANUFACTURING;

CLEANING;

EID: 28744440597     PISSN: 1523553X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. M. Olim, J. Electrochem. Soc., 144 (1997) p,3657
2. Mayer et al, J. Electronic, Materials, 8 (1979) p.855
3. Shwarzman et al, RCA Review, 46 (1985) p.81
4. Butterbaugh, Micro, 22 (1) (2004) p.20
5. S. Ojima et al, J. Electrochem. Soc., 144, (1997) p.1482