Application of highly charged Ar ion beams to ion beam lithography

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 242, Issue 1-2, 2006, Pages 247-249

  Momota, S ^a   Nojiri, Y ^a   Hamagawa, Y ^a   Hamaguchi, K ^a   Taniguchi, J ^b   Ohno, H ^b  

^a KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Highly charged ions; Ion beam lithography; Irradiation induced damage

Indexed keywords

ETCHING; GLASS; ION BEAM LITHOGRAPHY; IRRADIATION; MASKS; NANOSTRUCTURED MATERIALS;

ETCHING DEPTH; HIGHLY CHARGED IONS (HCI); SPIN-ON-GLASS (SOG); STENCIL MASK;

ARGON;

EID: 28544447247     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.08.030     Document Type: Conference Paper

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