Effects of oxygen ion beam application on crystalline structures of TiO2 films deposited on Si wafers by an ion beam assisted deposition

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 242, Issue 1-2, 2006, Pages 393-395

  Yokota, Katsuhiro ^a   Yano, Yoshikazu ^a   Nakamura, Kazuhiro ^a   Ohnishi, Masami ^a   Miyashita, Fumiyoshi ^a  

^a KANSAI UNIVERSITY   (Japan)

Author keywords

IBAD; Lattice structure; Silicon; Titanium oxide

Indexed keywords

EVAPORATION; ION BEAM ASSISTED DEPOSITION; IONIZATION; POLYCRYSTALLINE MATERIALS; SILICON; SILICON WAFERS; TITANIUM DIOXIDE;

EVAPORATION RATES; LATTICE STRUCTURE; OXYGEN GAS; RUTILE PHASE;

OXYGEN;

EID: 28544440847     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.08.170     Document Type: Conference Paper

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