Ion beam current dependence of compositions and resistivities on titanium nitride films deposited onto silicon by an ion beam assisted deposition method

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 242, Issue 1-2, 2006, Pages 390-392

  Yokota, Katsuhiro ^a   Kasuya, Tomohiko ^a   Nakamura, Kazuhiro ^a   Ohnishi, Masami ^a   Miyashita, Fumiyoshi ^a  

^a KANSAI UNIVERSITY   (Japan)

Author keywords

Composition; IBAD; Resistivity; Thin film; Titanium nitride

Indexed keywords

COMPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ION BEAM ASSISTED DEPOSITION; ION BEAMS; IONS; SILICON WAFERS; THIN FILMS;

CURRENT DEPENDENCE; ION BEAM CURRENTS; RESISTIVITY;

TITANIUM NITRIDE;

EID: 28544439165     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.08.171     Document Type: Conference Paper

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