Optical and structural properties of monocrystalline silicon wafers modified by compression plasma flow

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5851, Issue , 2005, Pages 420-426

  Galkin, N G ^a   Chusovitin, E A ^a,b   Galkin, K N ^a,b   Astashinskii, V M ^c   Kostyukevich, E A ^c   Kuzmitski, A M ^c   Gerasimenko, A V ^d  

^a INSTITUTE OF AUTOMATION AND CONTROL PROCESSES   (Russian Federation)

^b FAR EASTERN FEDERAL UNIVERSITY   (Russian Federation)

^c B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

^d INSTITUTE OF CHEMISTRY   (Russian Federation)

Author keywords

Band gap; Compression plasma flow; Lattice compression; Monocrystalline silicon; Optical properties; Surface modification; Surface morphology

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC POTENTIAL; MORPHOLOGY; OPTICAL PROPERTIES; PLASMA APPLICATIONS; SILICON WAFERS; SURFACE STRUCTURE; SURFACE TREATMENT;

BAND GAP; COMPRESSION PLASMA FLOW; LATTICE COMPRESSION; MONOCRYSTALLINE SILICON;

CRYSTALLINE MATERIALS;

EID: 28444478083     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.634533     Document Type: Conference Paper

References (5)

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