Demonstration of high saturation power/high gain SOAs using quantum well intermixing based integration platform

Electronics Letters

Volumn 41, Issue 24, 2005, Pages 1345-1346

  Raring, J W ^a   Skogen, E J ^b   Masanovic M L ^a   Denbaars, S P ^a   Coldren, L A ^a  

^a University of California   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATION; LIGHT AMPLIFIERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTODIODES; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS;

MONOLITHIC INTEGRATION; OPTICAL CONFINEMENT; SATURATION POWER; SEMICONDUCTOR OPTICAL AMPLIFIERS (SOA);

SEMICONDUCTOR QUANTUM WELLS;

EID: 28444438897     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20053248     Document Type: Article

References (8)

1. Raring, J.: et al. ' Demonstration of negative chirp characteristics over wide wavelength range using monolithically integrated SG-DBR laser electroabsorption modulator ', Electron. Lett., 2004, 40, p. 1599-1600
2. Skogen, E.: et al. ' Integration of high-gain and high-saturation power active regions using quantum well intermixing and offset-quantum well regrowth ', Electron. Lett., 2004, 40, p. 993-94
3. Raring, J.: et al. ' Quantum well intermixing and MOCVD regrowth for the monolithic integration of 40 Gbit/s UTC type photodiodes with QW based components ', Electron. Lett., 2005, 41, p. 1033-1034
4. Morito, K.: et al. ' A broadband MQW semiconductor optical amplifier with high saturation output power and low noise figure ', Semiconductor Optical Amplifiers and Their Applications Meeting, San Francisco, CA, USA, June 2004, PD1-1
5. Juodawlkis, P.W.: et al. ' High power 1.5 μm InGaAsP-InP slab-coupled optical waveguide amplifier ', IEEE Photonics Technol. Lett., 2005, 17, p. 279-281
6. Morito, K.: et al. ' High-output-power polarization-insensitive semiconductor optical amplifier ', J. Lightwave Technol., 2003, 21, (1), p. 176-181
7. Skogen, E.: et al. ' Post-growth control of the quantum-well band edge for the monolithic integration of widely-tunable lasers and electroabsorption modulators ', J. Sel. Top. Quantum Electron., 2003, 9
8. Raring, J.: et al. ' A study of regrowth interface and material quality for a novel InP based architecture ', J. Cryst. Growth., 2004, 273/1-2, p. 26-37