Integration of high-gain and hign-saturation-power active regions using quantum-well intermixing and offset-quantum-well regrowth

Electronics Letters

Volumn 40, Issue 16, 2004, Pages 993-994

  Skogen, E ^a   Raring, J ^a   DenBaars, S ^a   Coldren, L ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN CONTROL; LIGHT AMPLIFIERS; OPTICAL COMMUNICATION; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; TELECOMMUNICATION NETWORKS;

OPTICAL CONFINEMENT; OPTICAL NETWORKS; PHOTONIC INTEGRATED CIRCUITS (PIC); QUANTUM-WELL INTERMIXING;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 4043177589     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20045232     Document Type: Article

References (4)

1. Skogen, E.J., et al: 'Postgrowth control of the quantum-well band edge for the monolithic integration of widely-tunable lasers and electroabsorption modulators', IEEE J. Sel. Top. Quantum Electron., 2003, 9, pp. 1183-1190
2. Binsma, J., et al.: 'Characterization of butt-joint InGaAsP waveguides and their application to 1310 nm DBR-type MQW Ganin-clamped semiconductor optical amplifiers', IEICE Trans. Electron., 1997, E80-C, pp. 675-681
3. Aoki, M., et al.: 'InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOØVD', IEEE J. Quantum Electron., 1993, 29, pp. 2088-2096
4. Coldren, L., and Corzine, S.: 'Diode lasers and photonic integrated circuits' (John Wiley & Sons, Inc., New York, USA, 1995), p. 456