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Volumn 5851, Issue , 2005, Pages 435-440

Solid phase growth and properties of Mg2Si epitaxial films on Si(111)

Author keywords

Electronic structure; Epitaxial growth; Magnesium silicide; Morphology; Optical properties; Silicon; Structure; Template

Indexed keywords

ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; MAGNESIUM COMPOUNDS; MORPHOLOGY; OPTICAL PROPERTIES; SILICON; TEMPERATURE DISTRIBUTION;

EID: 28444432350     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.634544     Document Type: Conference Paper
Times cited : (1)

References (14)
  • 1
    • 0011082030 scopus 로고
    • Electronic structure of generic semiconductors: Antifluorite silicide and III-V compounds
    • D.M. Wood, A. Zinger, "Electronic structure of generic semiconductors: Antifluorite silicide and III-V compounds", Phys. Rev. 34, pp. 4105-4120, 1986.
    • (1986) Phys. Rev. , vol.34 , pp. 4105-4120
    • Wood, D.M.1    Zinger, A.2
  • 6
    • 36049056658 scopus 로고
    • 2Sn from 0.6 to 11.0 eV at 77K
    • 2Sn from 0.6 to 11.0 eV at 77K", Phys. Rev. 178, pp. 1353-1357, 1969.
    • (1969) Phys. Rev. , vol.178 , pp. 1353-1357
    • Scooler, W.J.1
  • 10
    • 28444448901 scopus 로고    scopus 로고
    • www.ntmdt.ru


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.