Radiation-induced trapping and charge transport in a smectic liquid crystal

Applied Physics Letters

Volumn 87, Issue 15, 2005, Pages 1-3

  Hudson, Katherine ^a,b   Ellman, Brett ^a   Gettwert, Volker ^a,c   Getmanenko, Yulia ^a   Twieg, Robert J ^a  

^a KENT STATE UNIVERSITY   (United States)

^b DREXEL UNIVERSITY   (United States)

^c FRAUNHOFER INSTITUTE FOR CHEMICAL TECHNOLOGY ICT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

PARASITIC EFFECTS;

CHARGE TRANSFER; ELECTRON IRRADIATION; SEMICONDUCTOR MATERIALS;

SMECTIC LIQUID CRYSTALS;

EID: 28344434372     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2099543     Document Type: Article

References (6)

1. M. Funahashi and J. Hanna, Appl. Phys. Lett. 71, 602 (2004); I. Shiyanovskaya and K. D. Singer, Phys. E 65, 041715 (2002).
2. M. Funahashi and J. Hanna, Appl. Phys. Lett. 71, 602 (2004); I. Shiyanovskaya and K. D. Singer, Phys. E 65, 041715 (2002).
3. Tests (unpublished) were run on pure 8PNPO12 by comparing TOF traces before and after exposing a cell for several hours to dc potentials at least as large as those used in TOF measurements. No effects were noted.
4. EHC Corporation.
5. Details of the irradiation facility may be found at www.ebeam.kent.edu
6. H. Maeda, M. Funahashi, and J. Hanna, Mol. Cryst. Liq. Cryst. 346, 183 (2000).