Direct integration of GaAs HEMTs on AlN ceramic substrates using fluidic self-assembly

Electronics Letters

Volumn 41, Issue 23, 2005, Pages 25-26

  Soga, I ^a   Hayashi, S ^a   Ohno, Y ^a   Kishimoto, S ^a   Maezawa, K ^a   Mizutani, T ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CAPACITANCE; CERAMIC MATERIALS; FLUIDICS; INDUCTANCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE;

DEVICE BLOCKS; FLUIDIC SELF-ASSEMBLY (FSA) TECHNOLOGY; GAAS HEMT; PLANAR WIRING PROCESS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 28244482658     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20052840     Document Type: Article

References (2)

1. Verma, A.K., Hadley, M.A., and Smith, J.S.: ' Fluidic self-assembly of silicon microstructures ', Proc. 45th Electronic Components Technology Conf., Las Vegas, NV, USA 1995, p. 1263
2. Soga, I., Ohno, Y., Kishimoto, S., Maezawa, K., and Mizutani, T.: ' Fluidic assembly of thin GaAs blocks on Si substrates ', Jpn. J. Appl. Phys., 2004, 42, p. 2226