High quality strained Si/SiGe substrates for CMOS and optical devices

Microelectronic Engineering

Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 215-220

  Weber, J ^a   Nebrich, L ^a   Bensch, F ^a   Neumeier, K ^a   Vogg, G ^a   Wieland, R ^a   Bonfert, D ^a   Ramm, P ^a  

^a Fraunhofer Institute Reliability and Microintegration   (Germany)

Author keywords

CMOS; Enhanced mobility; PIN diode; SiGe; Strained Silicon

Indexed keywords

CHEMICAL ANALYSIS; CMOS INTEGRATED CIRCUITS; OPTICAL DEVICES; SUBSTRATES;

ENHANCED MOBILITY; PIN DIODE; SIGE; STRAINED SILICON;

SILICON COMPOUNDS;

EID: 28044453745     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.012     Document Type: Conference Paper

References (3)

1. E. Kasper, A. Gruhle, and H. Kibbel IEEE IEDM Technical Digest 1993 79 82
2. G. Wöhl, C. Parry, E. Kasper, M. Jutzi, M. Berroth, in: Proceedings of the Second Joint Symposium on Opto- and Microelectronic Devices and Circuits, Stuttgart, Germany, vol. 1, No. 1, 2002, pp. 78-83.
3. M.T. Currie, C.W. Leitz, T.A. Langdo, G. Taraschi, E.A. Fitzgerald, and D.A. Antoniadis J. Vacuum Sci. Technol. B 19 6 2001 2268 2279