High quality silicon nitride deposited by Ar/N2/H 2/SiH4 high-density and low energy plasma at low temperature

Microelectronics Journal

Volumn 37, Issue 1, 2006, Pages 44-49

  Zhong, Chuan Jie ^a   Tanaka, Hiroaki ^b   Sugawa, Shigetoshi ^b   Ohmi, Tadahiro ^b  

^a JIANGNAN UNIVERSITY   (China)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

C V characteristics; J V characteristics; Plasma enhanced chemical vapor deposition; Refractive index; Silicon nitride

Indexed keywords

ARGON; ELECTRIC PROPERTIES; NITROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; REDUCTION;

C-V CHARACTERISTICS; DEPOSITION RATE; J-V CHARACTERISTICS; NITROGEN FLOW RATE;

SILICON NITRIDE;

EID: 28044445443     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.06.007     Document Type: Article

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