SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 311, Issue 1-2, 1997, Pages 133-137

Stoichiometric limitations of RF plasma deposited amorphous silicon-nitrogen alloys

(2) Almeida, S A a Silva, S R P a

a UNIVERSITY OF SURREY (United Kingdom)

Author keywords

Amorphous materials; Rutherford backscattering spectroscopy; Silicon nitride; Stress

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION; HYDROGENATION; MICROSTRUCTURE; OPTICAL VARIABLES MEASUREMENT; PLASMA APPLICATIONS; REFRACTIVE INDEX; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON ALLOYS; STOICHIOMETRY; STRESSES; THICKNESS MEASUREMENT;

COMPRESSIVE STRESS; ELASTIC RECOIL DETECTION; FEED GAS FLOW RATIO; SILICON NITROGEN ALLOYS; STRUCTURAL PROPERTIES;

AMORPHOUS ALLOYS;

EID: 0031343131 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(97)00460-4 Document Type: Article

Times cited : (10)

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