New lateral DMOS and IGBT structures realized on a partial SOI substrate based on LEGO process

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2005, Pages 74-77

  Bertrand, I ^a,c   Pathirana, V ^b   Imbernon, E ^a   Udrea, F ^b   Bafleur, M ^a   Ng, R ^b   Granier, H ^a   Rousset, B ^a   Dilhac, J M ^a  

^a LAAS CNRS   (France)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c Freescale Semiconducteurs France SAS   (France)

Author keywords

LDMOS; LEGO; LIGBT; Partial SOI

Indexed keywords

MOS DEVICES; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS;

LDMOS; LEGO; LIGBT; PARTIAL SOI;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 27944489618     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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