Boron damage profiles in crystalline and fluorine preamorphized silicon layers

Journal of the Electrochemical Society

Volumn 152, Issue 11, 2005, Pages

  Ohno, Naotsugu ^a   Hara, Tohru ^b,d   Current, Michael I ^c  

^a INTEL CORPORATION   (United States)

^b HOSEI UNIVERSITY   (Japan)

^c Current Scientific   (United States)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; BINDING ENERGY; BORON; CRYSTALLINE MATERIALS; FLUORINE; ION IMPLANTATION; PHOTOACOUSTIC EFFECT; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS;

BORON DAMAGE PROFILES; DAMAGE ACCUMULATION PROFILES; PHOTOACOUSTIC DISPLACEMENT (PAD); PREAMORPHIZATION;

SILICON;

EID: 27944483008     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2041987     Document Type: Article

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