Light emission properties of GaN-based laser diode structures

Acta Physica Polonica A

Volumn 108, Issue 4 PART 1, 2005, Pages 675-680

  Godlewski, M ^a,b   Phillips, M R ^c   Czernecki, R ^d   Targowski, G ^d   Perlin, P ^d   Leszczynski M ^d   Figge, S ^e   Hommel, D ^e  

^a INSTITUTE OF PHYSICS   (Poland)

^b CARDINAL STEFAN WYSZY SKI UNIVERSITY   (Poland)

^c UNIVERSITY OF TECHNOLOGY SYDNEY   (Australia)

^d INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^e UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON BEAMS; GALLIUM NITRIDE; LIGHT EMISSION; STIMULATED EMISSION;

FLUCTUATIONS; LASER DIODE EMISSION; LASER DIODE STRUCTURES;

SEMICONDUCTOR LASERS;

EID: 27944469126     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/aphyspola.108.675     Document Type: Conference Paper

References (7)

1. S. Nakamura, G. Fasol, The Blue Laser Diode, Springer Verlag, Berlin 1997.
2. M. Godlewski, V.Yu. Ivanov, E.M. Goldys, M. Phillips, T. Böttcher, S. Figge, D. Hommel, R. Czernecki, P. Prystawko, M. Leszczynski, P. Perlin, I. Grzegory, S. Porowski, Acta Phys. Pol. A 103, 689 (2003).
3. M. Godlewski, A. Kozanecki, chapter in: Handbook of Electroluminescent Materials, Ed. D.R. Vij, Institute of Physics Publishing of U.K., IOP Publishing Bristol 2004, p. 348.
4. M. Godlewski, E.M. Goldys, M.R. Phillips, R. Langer, A. Barski, J. Mater. Res. 15, 495 (2000).
5. M. Godlewski, E.M. Goldys, M.R. Phillips, K. Pakula, J.M. Baranowski, Appl. Surf. Sci. 177, 22 (2001).
6. M. Godlewski, E.M. Goldys, chapter in: III-Nitride Semiconductors: Optical Properties, in series: Optoelectronic Properties of Semiconductors and Superlattices, Eds. Hongxing Jiang, M. Omar Manasreh, Vol. II, Taylor & Francis Books, New York 2002, p. 259.
7. M. Godlewski, E. Lusakowska, E.M. Goldys, M.R. Phillips, T. Botcher, S. Figge, D. Hommel, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, Appl. Surf. Sci. 223, 294 (2004).